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Figure 3 from 0.8nm EOT and High Hole Mobility of Ge P-MISFETs Using HfAlO/ GeOx/Ge Gate Stacks Formed by Plasma Oxidation and Atomic Layer Deposition | Semantic Scholar
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Fabrication and MOS interface properties of ALD AlYO3/GeOx/Ge gate stacks with plasma post oxidation - ScienceDirect
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High mobility Ge pMOSFETs with ∼ 1nm thin EOT using Al2O3/GeOx/Ge gate stacks fabricated by plasma post oxidation | Semantic Scholar
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